Business

Laser Annealing for Semiconductor

Laser Annealing for Semiconductor

- VisAA offers optimal laser annealing processes that are required where conventional annealing tool is unable to fulfill the performance.

- Multi-wavelength system provides precise control of annealing depth and continuous wave laser irradiation performs gentle annealing
treatment without affecting neighboring structure.

  • VisAA (Visible-laser Activation Anneal) / VisMA (Visible-laser Melting Anneal)

    Multi Function Wafer Annealing Machine

    - Fine activation process: Diffusion-free, excellent Rs uniformity

    - Anneal depth control via multiple wavelength laser

    - Single or multiple wavelengths simultaneous irradiation on demand

    - Smooth roughness after annealing

    - Multi-wavelength optimized optics, precision stage and small foot print

  • Application

    - Wafer Ion Implant Activation Process

    - Void Remover to DRAM Deep Trench Structure Reflow Process

Main Specifications

Item Specification
System Semiconductor wafer annealing system by laser beam irradiation
System configuration 1) Laser & Optics system
2) Stage
3) Heating chuck system
4) Alignment & Monitoring system
5) Operating software
System Size Approximated size: 2,440(W) x 1,920(D) x ≤ 2500(H)
Approximated weight: 4ton
Available workpiece Material : 200mm wafer
Thickness : <1mm
Installation Environment Temp/Humidity Temperature control ≤ ±2℃
Humidity control 55% ± 10%
Clean room Class 1000
Vibration VC-C
Laser R-G-B Laser
Optics Beam mode : Rectangular flat-top
Beam size : >160x100µm² / >800x500µm²
Power density : >2x10⁵W/cm² (RGB each) / >8x10³W/cm² (RGB each)
Heating chuck Heater Power : 208V, 1,770W
Available Temp. : 380 °C (Max : 400 °C)
Stage X, Y, Z and θ axis
Accuracy ≤ ±1μm
Software function Recipe editor
Wafer alignment
Leveled user access control
Data logging
Alignment Lens magnification 2X, 10X

Process performance

  • Dopant Activation Process
  • Void Melting Process