Business
Advanced Laser Process Development
Precision laser process
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Features
- Pulse duration
- Pulse energy/fluence
- Repetition rate
- Polarization
- Wavelength
- Aggregated set of parameters with unique process strategy for sub-micron level precision processing
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Application
- Non-thermal metal/polymer/glass patterning and cutting
- Precision filter / masking devices
Fine Laser Patterning
- fs Laser : Cold ablation by ultrashort pulse duration
- Mask projection : Finely controlled beam shaping
- Unique process : Theraml effect management process
Target material
Metal(Invar 36)
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Organic material(Polyimide)
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Inorganic material(Glass)
Various process
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Fine patterning
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Embossing patterning
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High aspect ratio drilling
Semiconductor laser annealing
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Features
- Appropriate wavelength selection for various layers
- Optimum process strategy
- Optimum optics configuration
- Proper monitoring tools
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Application
- Activation anneal after implantation
- Void Removal within DRAM’s trench Structure
- Silicidation
- Crystallization
- Complete melting by suitable laser is a fine solution for void removal of trench structure
- Selection of wavelength and process parameters, successful process achieved
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Cross Sectional View of Typical DRAM Device
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Process parameter variation
Concept of melting annealing
- Dopant activation by laser would be needed when device dimension gets finer
- Fine activation result achieved by selection of wavelength and process parameters
- Amount of dopant diffusion is negligible compared to conventional RTA process
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Non-melting process mechanism :
Solid phase transition -
Limitation of conventional annealing ;
leakage current followed by diffusion
Process Performance
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Clearnace of defect including EOR
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Uniformity of Sheet Resistance :
StdDev/ave ~ 0.307%
Improved wafer surface roughness
- Diffusion ~ <5nm
- Activation without dopant diffusion
- Surface roughness ~ bare Si